Transform, Inc. (NASDAQ: TGAN), a leading global supplier of gallium nitride (GaN) power semiconductors, announced today the launch of two new SuperGaN devices in a 4-pin TO-247 package (TO-247-4L). The newly released TP65H035G4YS and TP65H050G4YS FET devices have on resistances of 35 milliohms and 50 milliohms respectively, and are equipped with a Kelvin source terminal to achieve more comprehensive switching functions for customers with lower energy loss. The new product will adopt Transform's mature silicon substrate gallium nitride process, which not only has high reliability but also has good cost-effectiveness, making it very suitable for mass production on existing silicon based production lines. At present, the 50 milliohm TP65H050G4YS FET is available for supply, and the 35 milliohm TP65H035G4YS FET is being sampled and is expected to be available for sale in the first quarter of 2024.

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In data centers with power levels of 1000 watts or more, renewable energy, and various industrial applications, the 4-pin SuperGaN device of the Transformer can be used as the original design option or directly replace the 4-pin silicon-based and SiC devices in existing solutions. The 4-pin configuration can further improve switch performance, providing flexibility for users. In a hard switching synchronous boost converter, compared to SiC MOSFETs with conduction resistance, the 35 milliohm SuperGaN 4-pin FET device reduces losses by 15% at 50 kHz and 27% at 100 kHz.

The unique advantages of Transform's SuperGaN FET devices include:

·Industry leading robustness:+/-20V gate threshold and 4V immunity.

·Better designability: reducing the required circuits around the device.

·Easy to drive: SuperGaN FET can use commercially available drivers commonly used in silicon devices.

The newly released TO-247-4L packaging device has the same robustness, ease of design, and ease of drive, and its core technical specifications are as follows:

Device model

Vds (V) minimum value

Rds (on) (m Ω) type

Vth (V) type

Id (25 ° C) (A) maximum value

encapsulation

TP65H035G4YS

six hundred and fifty

thirty-five

three point six

forty-six point five

Equipped with source terminals

TP65H050G4YS

six hundred and fifty

fifty

four

thirty-five

Equipped with source terminals

Philip Zuk, Senior Vice President of Business Development and Marketing at Transform, stated, "Transform will continue to expand its product line and introduce diversified gallium nitride field-effect transistors (GaN FETs) to the market." . No matter what design requirements customers have, Transformer can help them fully leverage the performance advantages of the SuperGaN platform. The SuperGaN packaged in a four pin TO-247 package provides excellent flexibility for designers and customers - with minimal or no design modifications required on the system of silicon or silicon carbide devices, it can achieve lower power system losses. "Transform is accelerating its entry into higher power applications, and these two newly launched devices are an important supplement to the company's product line."

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