Qorvo (NASDAQ code: QRVO), a leading global provider of connection and power solutions, recently announced the launch of four 1200V silicon carbide (SiC) modules in a compact E1B package. Two of them are in a half bridge configuration and two are in a full bridge configuration, with a minimum conducting resistance of 9.4m Ω in RDS (on). The new high-efficiency SiC module is very suitable for applications such as electric vehicle charging stations, energy storage, industrial power sources, and solar energy.

Ramanan Natarajan, Marketing Director of Qorvo SiC Power Product Line, said, "The modules in this new series can replace up to four discrete SiC FETs, simplifying thermal mechanical design and assembly. Our common source and common gate technology also supports higher switching frequencies, further reducing the size of the solution by using smaller external components.". The high efficiency of these modules can simplify the power design process, allowing our customers to focus on the design, layout, assembly, characteristic analysis and certification of a single module without dealing with multiple discrete components. "

These four SiC modules, represented by UHB100SC12E1BC3N with a 9.4m Ω conducting resistance, all adopt Qorvo's unique common source and common gate configuration, which minimizes conducting resistance and switching losses, thereby greatly improving efficiency. This advantage is particularly significant in soft switching applications. In addition, silver sintered chip mounting reduces thermal resistance to 0.23 ° C/W; Combined with the stacked chip structure in product models with "SC", its power cycle performance is twice higher than that of similar SiC power modules in the market. Thanks to the above characteristics, these highly integrated SiC power modules are not only easy to use, but also have excellent thermal performance, high power density, and high reliability.

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