Recently, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of five new half bridge IGBT power modules with improved design in INT-A-PAK packaging - VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N. These new devices are manufactured using Vishay's Trench IGBT technology, providing designers with two industry-leading technology options - low VCE (ON) or low Eoff - to reduce conduction or switching losses in high current inverters for transportation, energy, and industrial applications.

The recently released half bridge device uses Trench IGBT, which has better energy-saving effects than other devices on the market, and is packaged together with the fourth generation FRED Pt anti parallel diode with ultra soft reverse recovery characteristics. The small module INT-A-PAK package adopts a new gate pin layout, which is 100% compatible with the 34mm industrial standard package and can be replaced by mechanical insertion.

This industrial grade device can be used for power inverters in various applications, including railway equipment; Power generation, distribution, and storage systems; Welding equipment; Motor drivers and robots. To reduce the conduction loss of the TIG welding machine output stage, the voltage from the collector to the emitter of VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S is only ≤ 1.07 V at+125 ° C and rated current, reaching the advanced level in the industry. VS-GT100TS065N and VS-GT200TS065N are suitable for high-frequency power supply applications, with extremely low switching losses,+125 ° C, and an Eoff of only 1.0 mJ at rated current.

The module complies with RoHS standards, with a collector to emitter voltage of 650 V and a collector continuous current of 100 A to 200 A. The thermal resistance of the junction to the casing is extremely low. The device has passed UL E78996 certification and can be directly installed with heat sinks, resulting in low EMI and reduced requirements for absorption circuits.

Device specification table:

Product number

VCES

IC

VCE (ON)

Eoff

speed

encapsulation

@IC and+125 ° C

VS-GT100TS065S

650 V

100 A

1.02 V

6.5 mJ

DC~1 kHz

INT-A-PAK

VS-GT150TS065S

650 V

150 A

1.05 V

10.3 mJ

DC~1 kHz

INT-A-PAK

VS-GT200TS065S

650 V

200 A

1.07 V

13.7 mJ

DC~1 kHz

INT-A-PAK

VS-GT100TS065N

650 V

100 A

2.12 V

1.0 mJ

8 kHz~30 kHz

INT-A-PAK

VS-GT200TS065N

650 V

200 A

2.13 V

3.86 mJ

8 kHz~30 kHz

INT-A-PAK

The new IGBT power module can now provide samples and has achieved mass production, with a supply cycle of 15 weeks.

About The Author

This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry. They are committed to providing customers around the world with the most necessary, outdated, licensed, and hard-to-find parts.

Media Relations

Name: John Chen

Email: salesdept@topcomponents.ru