Superjunction devices support high rated power and high density, while reducing conduction and switching losses, thereby improving efficiency

MALVERN, Pennsylvania, USA, Shanghai, China - April 16, 2025- Recently, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of its new Gen 4.5 650 V E series power MOSFET, SiHK050N65E, providing high efficiency and power density for communication, industrial, and computing applications. Compared with the previous generation devices, the on resistance of Vishay Siliconix N-channel SiHK050N65E has been reduced by 48.2%, while the product of resistance and gate charge (an important factor of merit (FOM) for 650V MOSFETs in power conversion applications) has been reduced by 65.4%.

Vishay has introduced a variety of MOSFET technologies to support all stages of the power conversion process, including from high voltage input to low voltage output required by the latest high-tech equipment. With SiHK050N65E and other components in the Gen 4.5 650 V E series, the company is meeting the demand for improved efficiency and power density in the two early stages of power system architecture, namely power factor correction (PFC) and subsequent DC/DC converter modules. Typical applications include servers, edge computing and supercomputers; UPS、 High intensity discharge (HID) lamps and fluorescent lamp ballasts; Communication switch mode power supply (SMPS); Solar inverter; Welding equipment; Induction heating system; Electric drive and battery charger.

SiHK050N65E is based on Vishay's latest high-efficiency E-series superjunction technology, which can achieve a typical low on resistance of 0.048 Ω at 10V, suitable for high-power applications exceeding 6kW. At the same time, the breakdown voltage of the 650 V device reaches an additional 50 V, allowing it to operate stably within the input voltage range of 200 VAC to 277 VAC and comply with the Open Rack V3 (ORV3) standard of the Open Compute Project. In addition, the ultra-low gate charge of MOSFET is only 78 nC, providing a superior FOM value of 3.74* nC， This is crucial for reducing conduction and switching losses, thereby further saving energy and improving efficiency. This enables the device to meet specific titanium efficiency requirements in server power supplies, or achieve a peak efficiency of 96%.

In order to optimize switch performance in hard switching topologies such as PFC circuits and dual switch feedforward designs, recently released MOSFETs have lower effective output capacitance values, with Co (er) of 167 pF and Co (tr) of 1119 pF. Has the device reached an industry low of 8.0 on the FOM of resistance multiplied by Co (er)* PF. Is SiHK050N65E using PowerPAK? Available in a 10 x 12 package and equipped with Kelvin connections to reduce gate noise and improve dv/dt immunity. MOSFETs comply with RoHS standards and are halogen-free. They are specially designed to withstand overvoltage transients in avalanche mode, and 100% UIS testing ensures their limit values.

SiHK050N65E can now provide samples and has achieved mass production. For information on the supply cycle, please contact your local sales office.

Introduction to VISHAY

Vishay is one of the world's largest manufacturers of discrete semiconductor and passive electronic component series products, which are crucial for innovative design in the automotive, industrial, computing, consumer, communication, aerospace, and medical markets. Serving global customers, Vishay carries the DNA of technology?. Vishay Intertechnology, Inc. is a Fortune 1000 company listed on the New York Stock Exchange (VSH).