Beijing, China, October 11, 2024- X-FAB Silicon Foundries ("X-FAB"), a globally recognized and outstanding analog/mixed signal wafer foundry, announced today the launch of four new high-performance photodiodes on its existing 180nm CMOS semiconductor process platform, XS018, which is specially optimized for optical sensors. Enriched the product selection of photoelectric sensors and strengthened X-FAB's extensive product portfolio. Among the four new products launched this time, two are response enhanced photodiodes DOAFE and DOBFPE, which have improved sensitivity in ultraviolet, visible, and infrared wavelengths (full spectrum); In addition, there are two advanced ultraviolet specific photodiodes, dosuv and dosuvr. Doafe is a full spectrum sensor with a peak sensitivity of approximately 730nm. At a wavelength of 730nm, the spectral responsivity of the device is 0.48A/W. Compared with the previous generation, the sensitivity of the new product has increased by about 15%, and the response is smoother, increasing by more than 50%. In terms of applications, various applications including smoke detection, position sensing, and spectral measurement can benefit from the significant improvement in the performance of this photodiode. Unlike DOAFE, DOBFPE, which was also introduced, performs particularly well in the red and near-infrared (NIR) parts of the spectrum (with a peak sensitivity of approximately 770nm). This series of diodes is insensitive to ultraviolet and blue light, and has a unique spectral response function with a clear peak in the infrared (IR) region, making it an ideal choice for proximity sensing applications. The newly launched DOBFPE has further enhanced the sensitivity in the infrared (IR) range, with an increase of about 25% compared to DOB devices before X-FAB. Especially with the increasing trend of sensors being placed under glass panels, this device can achieve stronger performance and higher sensitivity in proximity sensing. To expand the diversity of photodiode products, X-FAB has also released a new advanced ultraviolet photodiode dosuv, which exhibits higher sensitivity in the UVC band (200nm to 280nm). At a wavelength of 260nm, the performance of dosUV is almost twice that of any previous product. At a wavelength of 235nm, its spectral responsivity can reach 0.16A/W. In addition, a reference design device called dosuvr was also released, which is suitable for the development of sensors based on dosuvr. These newly released photodiode devices can provide similar fill factor and photocurrent values as the previous generation products, while reducing the required chip area by about 20%, making them easier to integrate; Its smaller dark current value means that good signal integrity characteristics can be obtained. Meanwhile, the product supports a working temperature range of -40 ℃ to 175 ℃. Heming Wei, Market Manager of X-FAB Optoelectronic Technology, said, "These latest photodiodes have excellent performance, bringing customers performance improvements equivalent to the expected effects of upgrading to smaller process nodes. This highlights the excellence of our XS018 process platform in creating optoelectronic sensing devices, which surpasses competitors in device performance and reliability At present, simulation models for each new type of photodiode have been launched. Customers can use these models to evaluate their expected electrical and optical behavior.This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry

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